DSpace Collection:

Nanophotonic Resistive Switching in Ag-ITO-SiO2on Si: A Pathway to High-Density Optical Storage

Wed, 01 Jan 2025 00:00:00 GMT

Title: Nanophotonic Resistive Switching in Ag-ITO-SiO2on Si: A Pathway to High-Density Optical Storage Authors: Kumar, Santosh; Kumar, Ashutosh; Mishra, Rahul Dev; Kumar, Mukesh Abstract: We present a CMOS-compatible multilevel nanophotonic resistive switching device based on Ag-ITO-SiO2 structure on silicon emphasizing high storage density. The device exhibits stable multiple optical states, high-extinction ratio of 32 dB and high retention making ideal for in-memory computing and diverse applications in photonic systems. © 2025 IEEE.

Mitigating Charge Injection Bottlenecks via Dual-Doped Source/Drain for High-Speed Low-Voltage Capacitorless Dynamic Memory

Thu, 01 Jan 2026 00:00:00 GMT

Title: Mitigating Charge Injection Bottlenecks via Dual-Doped Source/Drain for High-Speed Low-Voltage Capacitorless Dynamic Memory Authors: Kranti, Abhinav Abstract: This work demonstrates the feasibility of thermionic injection-based program and erase operations for enabling a low-voltage, high-speed capacitorless dynamic random access memory (DRAM) via a dual-doped (DD) source/drain (S/D) transistor. The proposed capacitorless DRAM achieves a low latency (<0.5 ns), low energy consumption (~1.4 fJ), excellent retention (~200 ms at 85 °C) at a logic-compatible supply voltage of ±0.6 V while maintaining functionality at elevated temperatures (~5 ms at 125 °C). Results highlight the usefulness of DD-S/D engineering for high-speed, energy-efficient embedded cache and edge computing. © 1963-2012 IEEE.

Efficient All-Optical Modulation via ENZ-Statedriven ITO Ring Resonator with Layered Bus-Ring Integration

Wed, 01 Jan 2025 00:00:00 GMT

Title: Efficient All-Optical Modulation via ENZ-Statedriven ITO Ring Resonator with Layered Bus-Ring Integration Authors: Kumar, Mukesh Abstract: We experimentally demonstrate an ITO-based vertically coupled ring-resonator enabling all-optical modulation with enhanced light-matter interaction, reduced scattering, and no fine-gap etching. Leveraging ENZ nonlinearity, it achieves an 18 dB extinction ratio in 30 μm, advancing compact, efficient photonics for next-generation AI-driven optical communication systems. © 2025 IEEE.

Leveraging Distributed ZnO-Cu2O Heterojunctions for Ultraviolet Photodetector Applications

Wed, 01 Jan 2025 00:00:00 GMT

Title: Leveraging Distributed ZnO-Cu2O Heterojunctions for Ultraviolet Photodetector Applications Authors: Kumar, Ashutosh; Kumar, Sanutosh; Mohanta, Nikita; Kumar, Mukesh Abstract: A UV photodetector based on a Cu2O-ZnO heterojunction grating structure has been demonstrated, showing improved light absorption and responsivity. This device shows a responsivity of 0.7A/W at 360 nm and maintains good absorption across 250-4 5 0 n m. Potential applications include environmental monitoring, UV communication, biomedical diagnostics, and industrial safety. © 2025 IEEE.