Electrical Performance of Large-Area Y₂O₃ Memristive Crossbar Array With Ultralow C2C Variability

Abstract

Here, we report the electrical performance analysis of a Y&#x2082;O&#x2083;-based memristive crossbar array (MCA) of (30x25) on a large Si (100) wafer having a 3-inch diameter by utilizing dual-ion beam sputtering (DIBS) system. The MCA is highly stable and exhibits repeatable and reproducible resistive switching responses in terms of consistent resistive switching voltages ( <formula> <tex>$V_{SET}$</tex> </formula> and <formula> <tex>$V_{RESET}$</tex> </formula> ). The devices in the MCA efficiently depict the impact of device area scaling on the switching voltage parameters. The fabricated devices also show low device-to-device (D2D) variability in <formula> <tex>$V_{SET}$</tex> </formula> (2.64&#x0025;) <formula> <tex>$V_{RESET}$</tex> </formula> (10.13&#x0025;) and ultralow cycle-to-cycle (C2C) variability in <formula> <tex>$V_{SET}$</tex> </formula> (0.2&#x0025;) and <formula> <tex>$V_{RESET}$</tex> </formula> (1.07&#x0025;). Furthermore, this work also experimentally probes the impacts of various input signal parameters such as applied voltage, compliance current, and pulsewidth (PW) on the variability parameters. IEEE