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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/10549
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dc.contributor.authorRai, Niveditaen_US
dc.contributor.authorAhuja, Khushbooen_US
dc.contributor.authorSemwal, Sandeepen_US
dc.contributor.authorKranti, Abhinaven_US
dc.date.accessioned2022-07-15T10:45:05Z-
dc.date.available2022-07-15T10:45:05Z-
dc.date.issued2022-
dc.identifier.citationRai, N., Ahuja, K., Semwal, S., & Kranti, A. (2022). Incorporating Quantum Effects in Ultralow Power (ULP) Subthreshold Logic Design With Junctionless Nanowire Transistor. IEEE Transactions on Electron Devices, 69(7), 3983–3989. https://doi.org/10.1109/TED.2022.3172045en_US
dc.identifier.issn0018-9383-
dc.identifier.otherEID(2-s2.0-85132523530)-
dc.identifier.urihttps://doi.org/10.1109/TED.2022.3172045-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/10549-
dc.description.abstractThis article proposes a ultralow-power (ULP) subthreshold model for short-channel nanowire underlap junctionless transistor (JLT-U) incorporating quantum confinement effect. Considering JLT-U as a confined quantum harmonic oscillator, consistent values of subband energies are obtained for wide ranges of nanowire diameter and channel doping. The subband energy, electron line density, drain current, and threshold voltage of JLT-U are determined and validated with TCAD simulations. DC figures of merit (voltage swing, switching threshold, voltage gain, and noise margin) of ULP subthreshold inverter are investigated using a simplified circuit model. The approach presented in this article is of utmost benefit for device/circuit designers aiming for ULP subthreshold logic technology. IEEEen_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceIEEE Transactions on Electron Devicesen_US
dc.subjectDrain currenten_US
dc.subjectField effect transistorsen_US
dc.subjectLogic gatesen_US
dc.subjectNanowiresen_US
dc.subjectQuantum electronicsen_US
dc.subjectSemiconductor dopingen_US
dc.subjectThreshold voltageen_US
dc.subjectTiming circuitsen_US
dc.subjectCircuiten_US
dc.subjectCylindricalen_US
dc.subjectJunctionlessen_US
dc.subjectLogicen_US
dc.subjectQuantumen_US
dc.subjectSemiconductor process modelingen_US
dc.subjectSubthresholden_US
dc.subjectSubthreshold logicen_US
dc.subjectTransistor.en_US
dc.subjectUltra-low poweren_US
dc.subjectComputer circuitsen_US
dc.titleIncorporating Quantum Effects in Ultralow Power (ULP) Subthreshold Logic Design With Junctionless Nanowire Transistoren_US
dc.typeJournal Articleen_US
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