Film Deposition Processes Based on Eco-Friendly, Flexible, and Transparent Materials for High-Performance Resistive Switching

Abstract

In this review article, we discuss the recent progress in resistive switching (RS) using eco-friendly materials such as undoped ZnO and those doped with various elements for high-performance transparent and flexible RS. Various film deposition processes to fabricate resistive switches such as chemical bath deposition, atomic layer deposition, metal organic chemical vapor deposition, and sputtering (radio-frequency and direct-coupled magnetron sputtering) have been discussed through illustrative examples. Sputtered ZnO thin films exhibit excellent RS performance parameters such as remarkable endurance/retention and low operating voltages. Among all sputtering based deposition techniques, dual ion beam sputtering ensures ease of fabrication and high-performance parameters. Basic characteristics of RS device/memristor have been discussed with corresponding conduction mechanisms. Symmetric/asymmetric structures with different switching and electrode materials have been illustrated with related examples of transparent/flexible RS. Various transparent and flexible resistive switches have been explored with respect to film deposition processes to understand basic requisites for high-performance RS. © 2018 Elsevier Inc. All rights reserved.