Parallel or interconnected pores’ formation through etchant selective silicon porosification

Abstract

The effect of the oxidizer present in the etching solution on the surface morphology and microstructure obtained after porosifying a p-type silicon wafer using metal-assisted chemical etching was studied. The morphologies of Si wafers porosified using two different solutions, HF/H2 O2 and HF/KMnO4, were compared to establish how either of the oxidizers (H2 O2 or KMnO4 ) should be chosen depending on the desired application. A comparative study revealed that parallel pores with wire-like structures or interconnected pores with cheese-like structures can be obtained when H2 O2 or KMnO4 are chosen, respectively. Careful analysis of the SEM images was carried out using ImageJ to establish that the samples prepared using KMnO4 are more porous due to aggressive etching. Additionally, experimental and theoretical Raman spectroscopic studies have been utilized to study the presence of low-dimensional Si nanostructures, which are a few nanometers in size, at the microscopic level in porosified silicon. © 2021 The Author(s).