Unravelling the dynamics of ultrafast crystallization and the evolution of local structure in phase change materials

Abstract

Data storage is naturally a key technology that enables preserving information for the progress of modern society. Numerous technologies have been evolved starting from stone carvings to handwritten/printed scripts and to the state-of-the-art electronic as well as optical storage devices to cater such requirements over the past several decades. Some of the most successful semiconductor memories have been satisfying the demands over the last few decades for storageclass as well as fast computing. In the recent past, the physical limits, impressed on the dimensions of the transistor-based memory technologies based on the scaling, as predicted by Moore’s law, have demanded novel memory concepts with superior programming capabilities viz. high-speed, non-volatility, high endurance with better scalability for future electronics. Among various emerging memory technologies, chalcogenide-based Phase Change Memory (PCM) offers fascinating property combinations such as high scalability with an extremely fast, yet low power programming and non-volatility, which makes PCM as a strong candidate for the next generation high-speed non-volatile random access memory (NVRAM) as well as towards development of ‘universal memory’ ideally suited for future electronics