Please use this identifier to cite or link to this item:
https://dspace.iiti.ac.in/handle/123456789/11159
| Title: | आइआइटी ने तैयार की बेहतर प्रदर्शन करने वाली मेमोरी |
| Authors: | नईदुनिया | NaiDunia |
| Keywords: | Read Recharge (RRC) based Process Variation Tolerant 10T SRAM Cell;Dr. Santosh Kumar Vishvakarma;Nandakishor Yadav;Patent;Research in IITI |
| Issue Date: | 9-Dec-2022 |
| Publisher: | नईदुनिया (इंदौर) |
| URI: | http://dspace.iiti.ac.in:8080/jspui/handle/123456789/11159 |
| Type of Material: | Newspaper Clipping |
| Appears in Collections: | 04_Year 2022 |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 20221209_Nai_Dunia_Front_P-04.pdf | 161.65 kB | Adobe PDF | View/Open |
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