Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/11248
Title: High Detectivity and Fast MoS2 Monolayer MSM Photodetector
Authors: Singh, Ruchi A.
Patel, Chandrabhan
Kumar, Pawan Mathan
Dubey, Mayank
Mukherjee, Shaibal
Keywords: Chemical vapor deposition;Electrodes;Layered semiconductors;Monolayers;Photodetectors;Photons;Quantum efficiency;Chemical vapour deposition;Detectivity;External quantum efficiency;Metal semiconductor metal photodetector;Peak responsivity;Performance parameters;Platinum electrodes;Responsivity;Rise and fall time;Molybdenum compounds
Issue Date: 2022
Publisher: American Chemical Society
Citation: Singh, R., Patel, C., Kumar, P., Dubey, M., Sriram, S., & Mukherjee, S. (2022). High detectivity and fast MoS2 monolayer MSM photodetector. ACS Applied Electronic Materials, doi:10.1021/acsaelm.2c01301
Abstract: Metal-semiconductor-metal (MSM) photodetectors offer efficient solutions for many applications. Here, we combine surface energy assisted wet transfer of a MoS2 monolayer with patterned interdigitated platinum electrodes. The chemical vapor deposition (CVD)-deposited MoS2 monolayer is analyzed for various performance parameters. The achieved dark current and photocurrent are 5.37 × 10-8 A and on the order of 10-5 A, respectively. The achieved peak responsivity and peak external quantum efficiency are 13.15 mA/W at 480 nm and 21.86% at 4.5 V, respectively. The Ion/Ioff ratio obtained is 256 for 5 V with a rise and fall time of 0.06 and 0.14 ms, respectively. © 2022 American Chemical Society.
URI: https://doi.org/10.1021/acsaelm.2c01301
https://dspace.iiti.ac.in/handle/123456789/11248
ISSN: 2637-6113
Type of Material: Journal Article
Appears in Collections:Department of Electrical Engineering

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