Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/11458
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dc.contributor.authorBadole, Manishen_US
dc.contributor.authorVasavan, Hari Narayananen_US
dc.contributor.authorSaxena, Samriddhien_US
dc.contributor.author58094295500en_US
dc.contributor.authorKumar, Sunilen_US
dc.date.accessioned2023-03-07T11:47:57Z-
dc.date.available2023-03-07T11:47:57Z-
dc.date.issued2023-
dc.identifier.citationBadole, M., Vasavan, H. N., Saxena, S., Das, A. K., Srihari, V., & Kumar, S. (2023). Piezoelectric properties and structural evolution in la- and al-modified K0.5Bi0.5TiO3 ceramics. Journal of Alloys and Compounds, 944 doi:10.1016/j.jallcom.2023.169204en_US
dc.identifier.issn0925-8388-
dc.identifier.otherEID(2-s2.0-85147565003)-
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2023.169204-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/11458-
dc.description.abstractThe present study reports the effects of La3+ and Al3+ substitution on the structural, dielectric, and piezoelectric properties of (1-x)(K0.5Bi0.5)TiO3-xLaAlO3 (named as KBT-LAO) (x = 0–0.03) ceramics. Rietveld refinement of room temperature synchrotron X-ray diffraction (SXRD) data showed a decrement in tetragonal distortion and an increase in cubic symmetry with the increase in LAO content. An additional dielectric anomaly was noticed in poled x = 0.03 LAO sample. A diffuse dielectric curve with an improved relaxor behavior was observed in temperature-dependent dielectric measurements with LAO incorporation in KBT. The enhancement in activation energy values (from 0.95 ± 0.01 eV to 1.24 ± 0.01 eV) signified the suppression of oxygen vacancies with LAO doping. The current-voltage (I-V) plot suggested an improvement in room temperature DC resistivity in KBT-LAO solid solution. An increasing trend was noticed in the piezoelectric charge coefficient value and was found to be maximum (d33 ∼ 80 pC/N) for the 3 % LAO-doped sample. The improved piezoelectric voltage coefficient (g33 ∼ 24 × 10−3 V m/N) was observed for the x = 0.03 LAO doped sample, which is a 60 % improvement over the pure KBT sample (g33 ∼ 14 × 10−3 V m/N). Additionally, an energy harvesting experiment was performed on a piezo device prepared using poled 3 % LAO-doped ceramic. The peak-to-peak voltage &ampen_US
dc.description.abstractcurrent of ∼ 0.420 V &ampen_US
dc.description.abstract∼ 0.18 μA under normal finger tapping. © 2023 Elsevier B.V.en_US
dc.language.isoenen_US
dc.publisherElsevier Ltden_US
dc.sourceJournal of Alloys and Compoundsen_US
dc.titlePiezoelectric properties and structural evolution in La- and Al-modified K0.5Bi0.5TiO3 ceramicsen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Metallurgical Engineering and Materials Sciences

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