ZnO/Pt/P3HT Hetero-Junction Configuration for High Performance Self-Biased UV Detection

Abstract

In this work, a self-biased hybrid UV photodiode has been developed by introducing Pt nanoparticles at ZnO/P3HT interface which has increased barrier potential at the interface, thus significantly improving various device parameters such as ideality factor, selectivity, and rectification ratio and reduced the dark current by ∼ 1 order. Further, the photosensitivity, photoresponsivity, and specific detectivity of the device in the self-biased mode were 46, 14.8 mA/W, and 1.2× 1012 Jones, respectively. Moreover, the response time of the device was shortened to 45 ms. Thus, the reported device has the potential to fulfill the demands of modern technologies where fast response speed and high UV photosensitivity, and low power consumption are prime requirements. © 1980-2012 IEEE.