Electroluminescence, UV sensing, and pressure-induced conductance of Li+/Al3+ modified NiO: theoretical/experimental insights

Abstract

Sol–gel prepared doped NiO have been investigated. The dopant Al3+ is smaller in size but has a higher valence state than the host cation Ni2+. Hence, it induces an oxygen-rich lattice. The latent oxygen vacancies are annihilated and oxygen interstitials are created. Al3+ is smaller in size than Ni2+, promotes a tendency to reduce the extra O-content introduced by the higher charged Al3+ substitute ions. Such complex combinations of ions may affect the electronic affinity of the host ions and thereby bring modifications in the band properties. Changes in the population density of known defect states such as oxygen and cationic vacancies and interstitials can dominate physical and electronic functionalities. Such mechanisms have been explored in this report. Application of pressure may lead to modifications in the electronic clouds, which can also modify the nature of conduction of the materials and affect the functionality of devices. Graphical abstract: [Figure not available: see fulltext.] © 2023, The Author(s), under exclusive licence to The Materials Research Society.