Investigation of performance of oxide and TMD based photodetecting structures

Abstract

With the innovation of photodetectors (PDs), new applications in flexible and wearable electronics, foldable displays, nano generators, and health patches are now being investigated. High bandgap and 2D transition metal dichalcogenides (TMDs) materials are now being investigated in various PD device structures. ZnO and its alloys have been extensively studied for their potential applications as a wide bandgap semiconducting material due to low lattice mismatch, resistance to radiation damage, availability of native substrates, wet chemical processing capability, and the ability to produce high-quality films. One of the most studied TMDs for electrical, optoelectronic, photovoltaic, and photocatalytic applications is S-Mo-S covalently bonded MoS2 because of its two-dimensional structure, layer dependent conductivity, chemical composition, device miniaturization, and low power requirements. The goal of this entire project is to observe progress in the field of photodetector in terms of analytical modelling prior to actual fabrication of multilayer devices, newer materials for photodetecting applications, and flexible device electronics.