Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/12317
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dc.contributor.authorDubey, M.en_US
dc.date.accessioned2023-11-03T12:29:35Z-
dc.date.available2023-11-03T12:29:35Z-
dc.date.issued2023-
dc.identifier.citationPandey, V. K., Kim, Y. H., Choi, H., Dubey, M., Hasan, S. H., Heo, J., & Pandey, R. K. (2023). Novel SHAL base derived cobalt containing organic semiconducting metallogel thin film for self-powered high-performance photodetector application. Optical Materials, 143. Scopus. https://doi.org/10.1016/j.optmat.2023.114178en_US
dc.identifier.issn0925-3467-
dc.identifier.otherEID(2-s2.0-85166008282)-
dc.identifier.urihttps://doi.org/10.1016/j.optmat.2023.114178-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/12317-
dc.description.abstractThe development of new materials with facile synthesis and better semiconducting and photonic properties is crucial for the fabrication of durable thin film-based semiconductor devices. In this study, an organic semiconducting and photo-conducting metallogel has been obtained by deprotonation of the ligand SHAL using LiOH followed by treatment with Co(II) acetate in dimethylformamide (DMF) under ambient conditions. Various characterization techniques are used to analyze the mechanical, morphological, and optical properties. This analyses reveal the formation of a organic semiconducting Co(II)-metallogel with a nanofibrous architecture. Furthermore, a comprehensive analysis of this material in thin film form demonstrates its n-type organic semiconducting nature with a good rectification ratio in the Schottky diode configuration, among the best-known values of all these materials. The Co(II)-metallogel is analyzed based on its semiconducting properties as a self-powered (in absence of external bias voltage) photodetectors (PDs) in an ITO/Co(II)-metalogel/Au configuration, for the first time. The measured photocurrent demonstrates responsivity, R(λ), of 2.77 x 103, 0.27 x 103, and 0.025 × 103 mA/W, external quantum efficiency (EQE) of 73.4 x 104, 63.1 x 103, and 25 x 103, and detectivity (D) of 5.28 x 1012, 5.2 x 1011, 4.7 x 109 Jones, with on/off ratio of 16 080, 1580, and 150 at 0 V under the illumination of 470-nm (blue), 530-nm (green), and 630-nm (red) light sources, respectively. The high performance of the PDs is attributed to the UV–vis spectrum of the thin film, morphology, and metal-semiconductor energy band schematic outcomes. Overall, this study presents considerable potential for novel applications of Co(II)metallogels in technologically challenging electronic and optoelectronic devices. © 2023 Elsevier B.V.en_US
dc.language.isoenen_US
dc.publisherElsevier B.V.en_US
dc.sourceOptical Materialsen_US
dc.subjectHigh responsivityen_US
dc.subjectOrganic semiconducting metallogelen_US
dc.subjectPhotovoltaic propertyen_US
dc.subjectSchottky junctionen_US
dc.subjectSelf-powered photodetectoren_US
dc.subjectThin film devicesen_US
dc.titleNovel SHAL base derived cobalt containing organic semiconducting metallogel thin film for self-powered high-performance photodetector applicationen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Metallurgical Engineering and Materials Sciences

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