Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/12450
Title: Defects altered n/p-type Fe/Ga modified ZnO for photo-sensing applications
Authors: Mishra, Prashant Kumar
Rini, E. G.
Dobhal, Rachit
Sen, Somaditya
Keywords: Carrier Density and Mobility;Defects;Electron Localization Function;Lattice strain;Photo-sensing
Issue Date: 2023
Publisher: Elsevier Ltd
Citation: Mishra, P. K., Dash, A., Rini, E. G., Dobhal, R., Sengupta, A., & Sen, S. (2023). Defects altered n/p-type Fe/Ga modified ZnO for photo-sensing applications. Materials Today Communications, 36. Scopus. https://doi.org/10.1016/j.mtcomm.2023.106371
Abstract: Sol-gel prepared Fe/Ga co-doped ZnO, i.e., Zn0.9844(Fe1−xGax)0.0156 nanoparticles, with varying proportions of Fe/Ga, have been investigated. Individual Fe or Ga modified ZnO is well studied in reports. Structural properties, especially lattice defects and disorder, have not been correlated well enough to the electronic properties and related applicability. Fe-doping is reported to reduce conduction, while Ga-doping enhances the same. To understand the structural changes and how it is related to the modifications in the electronic properties, an attempt is being made to co-doped Fe/Ga in the ZnO lattice so that an understanding of the complex competition of these opposite natures can be studied. Sol-gel prepared Fe/Ga modified ZnO with P63mc space group is investigated for this purpose. The structural, defects and electronic behavior of modified and pristine ZnO have been detailed using: X-ray diffraction, Raman spectroscopy, UV–vis/PL spectroscopy and Hall-effect measurements. Changes in the electronic behavior i.e., conductivity in light ON and OFF conditions is also well studied and correlated with defects. A theoretical analysis of the same was performed using the electron localization function of the system which reveals a weaker electron cloud around Fe but a stronger around Ga as compared to Zn, thereby resisting and aiding the conduction process in Fe-doped and Ga-doped samples. The mobility, carrier concentration, and Hall coefficient parameters are modified along with the modified native defects of ZnO. © 2023
URI: https://doi.org/10.1016/j.mtcomm.2023.106371
https://dspace.iiti.ac.in/handle/123456789/12450
ISSN: 2352-4928
Type of Material: Journal Article
Appears in Collections:Department of Physics

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetric Badge: