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DC Field | Value | Language |
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dc.contributor.author | Chaudhary, Sumit | en_US |
dc.contributor.author | Kumar, Pawan V.Anil | en_US |
dc.contributor.author | Mahapatra, Brahamdutta | en_US |
dc.contributor.author | Patel, Chandrabhan | en_US |
dc.contributor.author | Dubey, Mayank | en_US |
dc.contributor.author | Mukherjee, Shaibal | en_US |
dc.date.accessioned | 2023-12-22T09:19:04Z | - |
dc.date.available | 2023-12-22T09:19:04Z | - |
dc.date.issued | 2023 | - |
dc.identifier.citation | Rana, V., Jain, N. K., & Pathak, S. (2023b). Mathematical modelling and validation of twist-free lead crowning of spur gears by pulsed electrochemical flank modification process. International Journal of Advanced Manufacturing Technology. Scopus. https://doi.org/10.1007/s00170-023-12468-w | en_US |
dc.identifier.isbn | 979-8350333466 | - |
dc.identifier.issn | 1944-9399 | - |
dc.identifier.other | EID(2-s2.0-85173593913) | - |
dc.identifier.uri | https://doi.org/10.1109/NANO58406.2023.10231273 | - |
dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/12982 | - |
dc.description.abstract | This article analyzes the direct current and small-signal parameters of MgZnO/CdZnO (MCO) HEMT for microwave application. Further, the effect of the gate length on microwave performance parameters such as transconductance (g m), cut-off frequency (f T), maximum oscillation frequency (fMAX) of MCO HEMT has been analyzed. The two-dimensional electron gas (2DEG) value for MCO HEMT is 7.2 × 1013cm-2, gm is 103 mS/mm. The f T and fMAX of MCO HEMT are 7.2 GHz, and 13.2 GHz, respectively. The f T and fMAX increases with decrease in the gate length. Maximum f T and fMAX of MCO HEMT are 13.87 GHz, and 21.5 GHz, respectively for a gate length of 500 nm. This work is significant for the development of cost-effective HEMT for microwave application. © 2023 IEEE. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE Computer Society | en_US |
dc.source | Proceedings of the IEEE Conference on Nanotechnology | en_US |
dc.title | Microwave Performance Analysis of MgZnO/CdZnO HEMT | en_US |
dc.type | Conference Paper | en_US |
Appears in Collections: | Department of Electrical Engineering |
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