Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/12982
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dc.contributor.authorChaudhary, Sumiten_US
dc.contributor.authorKumar, Pawan V.Anilen_US
dc.contributor.authorMahapatra, Brahamduttaen_US
dc.contributor.authorPatel, Chandrabhanen_US
dc.contributor.authorDubey, Mayanken_US
dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2023-12-22T09:19:04Z-
dc.date.available2023-12-22T09:19:04Z-
dc.date.issued2023-
dc.identifier.citationRana, V., Jain, N. K., & Pathak, S. (2023b). Mathematical modelling and validation of twist-free lead crowning of spur gears by pulsed electrochemical flank modification process. International Journal of Advanced Manufacturing Technology. Scopus. https://doi.org/10.1007/s00170-023-12468-wen_US
dc.identifier.isbn979-8350333466-
dc.identifier.issn1944-9399-
dc.identifier.otherEID(2-s2.0-85173593913)-
dc.identifier.urihttps://doi.org/10.1109/NANO58406.2023.10231273-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/12982-
dc.description.abstractThis article analyzes the direct current and small-signal parameters of MgZnO/CdZnO (MCO) HEMT for microwave application. Further, the effect of the gate length on microwave performance parameters such as transconductance (g m), cut-off frequency (f T), maximum oscillation frequency (fMAX) of MCO HEMT has been analyzed. The two-dimensional electron gas (2DEG) value for MCO HEMT is 7.2 × 1013cm-2, gm is 103 mS/mm. The f T and fMAX of MCO HEMT are 7.2 GHz, and 13.2 GHz, respectively. The f T and fMAX increases with decrease in the gate length. Maximum f T and fMAX of MCO HEMT are 13.87 GHz, and 21.5 GHz, respectively for a gate length of 500 nm. This work is significant for the development of cost-effective HEMT for microwave application. © 2023 IEEE.en_US
dc.language.isoenen_US
dc.publisherIEEE Computer Societyen_US
dc.sourceProceedings of the IEEE Conference on Nanotechnologyen_US
dc.titleMicrowave Performance Analysis of MgZnO/CdZnO HEMTen_US
dc.typeConference Paperen_US
Appears in Collections:Department of Electrical Engineering

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