Non-volatile magnetoresistive random-access memory with semiconductor-based writing/reading channels

Abstract

We proposed a Magnetoresistive Random Access Memory(MRAM) with ndoped AlGaAs/GaAs-based writing/reading channels. We found that the tunable gate voltage in n-doped AlGaAs/GaAs QW (quantum well) is key in designing an efficient and ultrafast MRAM. The Rashba spin-orbit coupling in such QWs can be tuned appropriately by the gate voltage to create an intense spin Hall field which in turn interacts with the ferromagnetic layer of the MRAM through the mechanism of spin-orbit torque. Needless to say, the switching time of the MRAM is also gate tunable. Within the diffisive limit in the QW, the switching time decreases as the Fermi level is tuned towards the bottom of the Rashba band hinting towards an ultrafast n-doped AlGaAs/GaAs semiconductor heterostructure based MRAM. For this reason and for the ease of tuning the switching time, our proposed MRAM is thus a better alternative to the conventional ferromagnetic/spin Hall effect bi-layers MRAM.