Multimode Operation of Light-Gated Transistors Based on Millimeter-Scale Transition-Metal Dichalcogenide Grown by Chemical Vapor Deposition

Abstract

The operation of conventional transistors involves electrostatically gated control over the deposited dielectric layers

however, the integration of electric gating into optoelectrical transistors can result in thermal noise or fabrication complexity. Herein, chemical-vapor-deposition-grown millimeter-scale WSe2 flakes were used to construct light-gated transistors (LGTs) suitable for single-device logic operations. Different LGT behaviors were observed at above- and below-threshold light-gating powers upon different pulse modulations: the LGTs exhibited high sensitivity and cycling stability within a broad range of operating frequencies at a below-threshold light power. Light-gated logic above-threshold power enabled single-device logic operations under simultaneous electric and light gating, whereas a transition to light-triggered synaptic operation occurred for laser pulse modulation under above-threshold light. In the synaptic mode, the LGTs mimicked bioinspired synaptic functionalities suitable for neuromorphic computing, thus holding promise for the fabrication of optically operated in-sensor computing hardware that exhibits multifunctionality suitable for the realization of multimodal interfaces and artificial intelligence. © 2024 American Chemical Society.