Hexagonal boron nitride for microelectronics, nanoelectronics, and nanophotonics

Abstract

The boron nitride structures are composed of the same number of boron and nitrogen atoms. Even though boron nitride is considered a synthetic material, recent discoveries are evidence that the material is available in nature itself. Boron nitrides are available in three different forms such as wurtzite, graphite-like hexagonal structures, and diamond-like cubic. Among them, hexagonal boron nitride attracts much more due to the opportunities to attempt various strategies during the synthesis process to get the variation in its physicochemical characteristics which could be used in microelectronics, nanoelectronics, nano photonics, catalysis, and biomedical applications. However, the insulating characteristics restrict its utilization in different applications. Several attempts have been done to reduce the bandgap of hexagonal boron nitride by exploring the effect of different elemental doping to utilize as a semiconductor in electronics and photonics applications. In this chapter, we discuss the advancement made in the synthesis process through chemical exfoliation, vapor deposition techniques, and other easy synthesis processes. We also discuss the various morphologies, surface functionalization, and doping process effects on the applications in micro/nanoelectronics and nanophotonics. © 2024 by Elsevier Inc. All rights reserved, including those for text and data mining, AI training, and similar technologies.