Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/15039
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dc.contributor.authorDhakad, Narendra Singhen_US
dc.contributor.authorVishvakarma, Santosh Kumaren_US
dc.date.accessioned2024-12-24T05:20:01Z-
dc.date.available2024-12-24T05:20:01Z-
dc.date.issued2024-
dc.identifier.citationDhakad, N. S., & Vishvakarma, S. K. (2024). Configurable Multi-Port Memory Architecture for High-Speed Data Communication. IEEE Embedded Systems Letters. Scopus. https://doi.org/10.1109/LES.2024.3485509en_US
dc.identifier.issn1943-0663-
dc.identifier.otherEID(2-s2.0-85209153222)-
dc.identifier.urihttps://doi.org/10.1109/LES.2024.3485509-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/15039-
dc.description.abstractMemory management is necessary with the increasing number of multi-connected AI devices and data bandwidth issues. For this purpose, high-speed multi-port memory is used. The traditional multi-port memory solutions are hard-bounded to a fixed number of ports for read or write operations. In this work, we proposed a pseudo-quad-port memory architecture. Here, ports can be configured (1-port, 2-port, 3-port, 4-port) for all possible combinations of read/write operations for the 6T static random access memory (SRAM) memory array, which improves the speed and reduces the bandwidth for data transfer. The proposed architecture improves the bandwidth of data transfer by 4×. The architecture provides 1.3× and 2× area efficiency compared to dual-port 8T and quad-port 12T SRAM. © 2009-2012 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceIEEE Embedded Systems Lettersen_US
dc.subjecthigh-bandwidth memoryen_US
dc.subjectmemory addressingen_US
dc.subjectMulti-port memoryen_US
dc.titleConfigurable Multi-Port Memory Architecture for High-Speed Data Communicationen_US
dc.typeJournal Articleen_US
dc.rights.licenseAll Open Access, Green-
Appears in Collections:Department of Electrical Engineering

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