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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Vishvakarma, Santosh Kumar | en_US |
| dc.date.accessioned | 2024-12-24T05:20:01Z | - |
| dc.date.available | 2024-12-24T05:20:01Z | - |
| dc.date.issued | 2023 | - |
| dc.identifier.citation | Gupta, D., Upadhyay, A. K., Beohar, A., & Vishvakarma, S. K. (2023). Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping. Memories - Materials, Devices, Circuits and Systems. Scopus. https://doi.org/10.1016/j.memori.2023.100031 | en_US |
| dc.identifier.issn | 2773-0646 | - |
| dc.identifier.other | EID(2-s2.0-85208450865) | - |
| dc.identifier.uri | https://doi.org/10.1016/j.memori.2023.100031 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/15049 | - |
| dc.description.abstract | The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper. Specifically, we study the program characteristics, data retention capability junction-free NAND flash memory with half pitch range from 35 nm to 12 nm. Based on our analysis, we highlight that the retrograde channel doping approach can improve not only the SCEs but also the program speed and data control time for 3-D junction-free NAND flash memory, without varying the oxide stack in charge trap-based flash memory. © 2023 The Authors | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier Ltd | en_US |
| dc.source | Memories - Materials, Devices, Circuits and Systems | en_US |
| dc.subject | 3-D NAND flash memory | en_US |
| dc.subject | Data retention | en_US |
| dc.subject | Retrograde doping | en_US |
| dc.subject | Short channel effects | en_US |
| dc.title | Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping | en_US |
| dc.type | Journal Article | en_US |
| dc.rights.license | All Open Access, Gold | - |
| Appears in Collections: | Department of Electrical Engineering | |
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