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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/15324
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dc.contributor.authorKumar, Sanjayen_US
dc.date.accessioned2025-01-15T07:10:25Z-
dc.date.available2025-01-15T07:10:25Z-
dc.date.issued2022-
dc.identifier.citationGill, G. S., Kumar, S., Mukhiya, R., & Khanna, V. K. (2022). FEM of Air-Coupled Circular Capacitive Micromachined Ultrasonic Transducer for Anodic Bonding Process using SOI Wafer. Applications of Modelling and Simulation. Scopus. https://www.scopus.com/inward/record.uri?eid=2-s2.0-85148684300&partnerID=40&md5=9f9cb8407fead51863d0ff63bb93c11den_US
dc.identifier.issn2600-8084-
dc.identifier.otherEID(2-s2.0-85148684300)-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/15324-
dc.description.abstractIn this paper, Finite Element Method (FEM)-based design and simulation of circular capacitive micromachined ultrasonic transducer (CMUT) has been discussed. The FEM simulation of CMUT is accomplished by using MEMCAD tools CoventorWare® and COMSOL™. The simulation has been performed for air-coupled CMUT devices in which the resonance frequency of the designed CMUT device is 3.9 MHz. Moreover, the simulation results for resonance frequency and pull-in voltage show good agreement with analytical calculations. Finally, a device layer transfer fabrication process flow is also proposed to develop the MEMS-based CMUT devices. © 2022 The Authors.en_US
dc.language.isoenen_US
dc.publisherARQII Publicationen_US
dc.sourceApplications of Modelling and Simulationen_US
dc.subjectCMUTen_US
dc.subjectFEM modellingen_US
dc.subjectPull-in voltageen_US
dc.subjectResonance frequencyen_US
dc.subjectWafer bondingen_US
dc.titleFEM of Air-Coupled Circular Capacitive Micromachined Ultrasonic Transducer for Anodic Bonding Process using SOI Waferen_US
dc.typeJournal Articleen_US
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