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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Singh Parihar, Mukta Singh | en_US |
dc.contributor.author | Kranti, Abhinav | en_US |
dc.date.accessioned | 2025-01-15T07:10:30Z | - |
dc.date.available | 2025-01-15T07:10:30Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | Parihar, M. S., & Kranti, A. (2014). Bipolar Attributes of Unipolar Junctionless MOSFETs. In V. K. Jain & A. Verma (Eds.), Physics of Semiconductor Devices (pp. 169–170). Springer International Publishing. https://doi.org/10.1007/978-3-319-03002-9_42 | en_US |
dc.identifier.isbn | 978-331903001-2 | - |
dc.identifier.issn | 1863-5520 | - |
dc.identifier.other | EID(2-s2.0-85178656062) | - |
dc.identifier.uri | https://doi.org/10.1007/978-3-319-03002-9_42 | - |
dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/15406 | - |
dc.description.abstract | In this work, we present an analysis of bipolar effects in unipolar junctionless (JL) MOSFETs. The reason for dominant bipolar behavior in JL devices in comparison to inversion mode devices has been analyzed. Bipolar induced effects such as steep subthreshold slope, hysteresis in transfer and output characteristics, single transistor latch, and snapback are presented. Results will be useful for identifying advantages and challenges of JL transistors for dynamic memory applications. © Springer International Publishing Switzerland 2014. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer Science and Business Media Deutschland GmbH | en_US |
dc.source | Environmental Science and Engineering | en_US |
dc.subject | Bipolar | en_US |
dc.subject | Hysteresis | en_US |
dc.subject | Junctionless | en_US |
dc.subject | MOSFET | en_US |
dc.title | Bipolar Attributes of Unipolar Junctionless MOSFETs | en_US |
dc.type | Conference Paper | en_US |
Appears in Collections: | Department of Electrical Engineering |
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