Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/15406
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dc.contributor.authorSingh Parihar, Mukta Singhen_US
dc.contributor.authorKranti, Abhinaven_US
dc.date.accessioned2025-01-15T07:10:30Z-
dc.date.available2025-01-15T07:10:30Z-
dc.date.issued2014-
dc.identifier.citationParihar, M. S., & Kranti, A. (2014). Bipolar Attributes of Unipolar Junctionless MOSFETs. In V. K. Jain & A. Verma (Eds.), Physics of Semiconductor Devices (pp. 169–170). Springer International Publishing. https://doi.org/10.1007/978-3-319-03002-9_42en_US
dc.identifier.isbn978-331903001-2-
dc.identifier.issn1863-5520-
dc.identifier.otherEID(2-s2.0-85178656062)-
dc.identifier.urihttps://doi.org/10.1007/978-3-319-03002-9_42-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/15406-
dc.description.abstractIn this work, we present an analysis of bipolar effects in unipolar junctionless (JL) MOSFETs. The reason for dominant bipolar behavior in JL devices in comparison to inversion mode devices has been analyzed. Bipolar induced effects such as steep subthreshold slope, hysteresis in transfer and output characteristics, single transistor latch, and snapback are presented. Results will be useful for identifying advantages and challenges of JL transistors for dynamic memory applications. © Springer International Publishing Switzerland 2014.en_US
dc.language.isoenen_US
dc.publisherSpringer Science and Business Media Deutschland GmbHen_US
dc.sourceEnvironmental Science and Engineeringen_US
dc.subjectBipolaren_US
dc.subjectHysteresisen_US
dc.subjectJunctionlessen_US
dc.subjectMOSFETen_US
dc.titleBipolar Attributes of Unipolar Junctionless MOSFETsen_US
dc.typeConference Paperen_US
Appears in Collections:Department of Electrical Engineering

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