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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Srivastava, Tulika | en_US |
| dc.contributor.author | Bajpai, Gaurav | en_US |
| dc.contributor.author | Kumar, Sunil | en_US |
| dc.contributor.author | Shirage, Parasharam Maruti | en_US |
| dc.contributor.author | Sen, Somaditya | en_US |
| dc.date.accessioned | 2025-01-15T07:10:40Z | - |
| dc.date.available | 2025-01-15T07:10:40Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.citation | Srivastava, T. (2016). Effect of Si doping on optical & electrical property of ZnO. 13th International Conference on Fiber Optics and Photonics, W3A.88. https://doi.org/10.1364/PHOTONICS.2016.W3A.88 | en_US |
| dc.identifier.isbn | 978-194358022-4 | - |
| dc.identifier.issn | 2162-2701 | - |
| dc.identifier.other | EID(2-s2.0-85165785465) | - |
| dc.identifier.uri | https://doi.org/10.1364/PHOTONICS.2016.W3A.88 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/15483 | - |
| dc.description.abstract | Zn (1-x)SixO for x= 0, 0.041, 0.055 & 0.083 was synthesized by sol-gel method followed by solid state sintering. Quenching of defect state and increase in DC conductivity was observed till x= 0.055 (solubility limit). © OSA 2016. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Optica Publishing Group (formerly OSA) | en_US |
| dc.source | Optics InfoBase Conference Papers | en_US |
| dc.title | Effect of Si doping on optical & electrical property of ZnO | en_US |
| dc.type | Conference Paper | en_US |
| Appears in Collections: | Department of Metallurgical Engineering and Materials Sciences | |
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