Single step wet-chemical deposition of cesium doped β-Ga2O3 nanostructured films for memristor application

Abstract

Cesium doped gallium oxide (Cs-Ga2O3) nanostructured films are deposited using wet-chemical approach in single step process. Effect of different concentration of Cs (1% to 100 % molar concentration with respect to concentration of Ga precursor) on morphological, structural, optical and electrical properties of doped Ga2O3 nanostructured films are investigated. The morphology (diamond shaped nanostructures) remains intact for lower doping concentration of Cs (1 to 7.5% of Cs molarity with respect to Ga molarity in precursor solution) whereas when doping concentration is increased (10 to 100% of Cs with respect to Ga molarity in precursor solution) the morphology drastically changed to flower and clustered particles. The shift in diffraction pattern indicates the presence of Cs inside the Ga2O3 crystals. The high amount of Cs in precursors solution (half or equal molarity of Cs with respect to Ga molarity (50 to 100%)) in precursor solution results doping as well as formation of dicesium oxide. The doping of Cs is further confirmed by X-ray photoelectron spectroscopy. The electrical conductivity of doped Ga2O3 nanostructured films varies with variation in Cs ions concentration. The higher resistance is noticed in memristor device when the doping concentration is lesser. The RON/ROFF ratio is decreased after Cs doping and to be found only 101 orders but altering the switching speed of the memory device. © 2022 The Author(s)