Investigation on Hybrid Green Light-Emitting Diode

Verma, Shruti; Mukherjee, Shaibal

Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/15505

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DC Field	Value	Language
dc.contributor.author	Verma, Shruti	en_US
dc.contributor.author	Mukherjee, Shaibal	en_US
dc.date.accessioned	2025-01-15T07:10:42Z	-
dc.date.available	2025-01-15T07:10:42Z	-
dc.date.issued	2014	-
dc.identifier.citation	Verma, S., & Mukherjee, S. (2014). Investigation on Hybrid Green Light-Emitting Diode. In V. K. Jain & A. Verma (Eds.), Physics of Semiconductor Devices (pp. 281–283). Springer International Publishing. https://doi.org/10.1007/978-3-319-03002-9_71	en_US
dc.identifier.isbn	978-331903001-2	-
dc.identifier.issn	1863-5520	-
dc.identifier.other	EID(2-s2.0-84919890104)	-
dc.identifier.uri	https://doi.org/10.1007/978-3-319-03002-9_71	-
dc.identifier.uri	https://dspace.iiti.ac.in/handle/123456789/15505	-
dc.description.abstract	We propose a hybrid light-emitting diode (LED) design comprising of p-GaN/ p-MgZnO/ InGaN/ n-MgZnO/ n-ZnO emanating green electroluminescence centered around 560 nm. We compare the performance of proposed LED with ZnO and GaN based green LEDs through 2-D numerical simulation. It is found that hybrid LED shows highest IQE of 93.2% with added advantage of least efficiency droop at high injection current. © Springer International Publishing Switzerland 2014.	en_US
dc.language.iso	en	en_US
dc.publisher	Springer Science and Business Media Deutschland GmbH	en_US
dc.source	Environmental Science and Engineering	en_US
dc.subject	Efficiency droop	en_US
dc.subject	GaN	en_US
dc.subject	internal quantum efficiency	en_US
dc.subject	ZnO	en_US
dc.title	Investigation on Hybrid Green Light-Emitting Diode	en_US
dc.type	Conference Paper	en_US
Appears in Collections:	Department of Electrical Engineering

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