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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/15506
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dc.contributor.authorVerma, Shrutien_US
dc.contributor.authorPandey, Sushil Kumaren_US
dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2025-01-15T07:10:42Z-
dc.date.available2025-01-15T07:10:42Z-
dc.date.issued2014-
dc.identifier.citationVerma, S., Pandey, S. K., Gupta, M., & Mukherjee, S. (2014). Effect of Growth Temperature on Properties of CdZnO Thin Films. In V. K. Jain & A. Verma (Eds.), Physics of Semiconductor Devices (pp. 865–867). Springer International Publishing. https://doi.org/10.1007/978-3-319-03002-9_222en_US
dc.identifier.isbn978-331903001-2-
dc.identifier.issn1863-5520-
dc.identifier.otherEID(2-s2.0-84905646066)-
dc.identifier.urihttps://doi.org/10.1007/978-3-319-03002-9_222-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/15506-
dc.description.abstractTernary CdZnO thin films were grown on sapphire substrate with varied growth temperature from 300°C to 600°C using dual ion-beam sputtering system. The structural, morphological and optical properties of the films were deeply studied. X-ray Diffraction (XRD) measurements indicate phase separation in the deposited CdZnO films. The photoluminescence studies indicate emission centered around 440 nm ~ 2.8 eV. The optical band gap was confirmed by UV-Vis spectrometric measurements. It was also found that band gap narrows down with the increase in growth temperature. © Springer International Publishing Switzerland 2014.en_US
dc.language.isoenen_US
dc.publisherSpringer Science and Business Media Deutschland GmbHen_US
dc.sourceEnvironmental Science and Engineeringen_US
dc.subjectAFMen_US
dc.subjectCdZnOen_US
dc.subjectphotoluminescenceen_US
dc.subjectUV-Vis spectrometry and XRDen_US
dc.titleEffect of Growth Temperature on Properties of CdZnO Thin Filmsen_US
dc.typeConference Paperen_US
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