Ultralow Powered 2D MoS2-Based Memristive Crossbar Array for Synaptic Applications

Abstract

Two-dimensional materials are increasingly integral to beyond-CMOS electronics, facilitating the development of emerging memristive device technology for information storage and neuromorphic computing. Despite their emergence, some critical challenges including low device yield, substantial device-to-device (D2D), and cycle-to-cycle (C2C) variability factors hinder the development of high-density memristive devices for future low-power electronic applications. Here, we demonstrate a memristive crossbar array (MCA) in which multilayer 2D MoS2 acts as a resistive switching layer that offers lower switching voltages with a few microseconds pulse width. Additionally, the use of 2D MoS2 further excels in integration density and energy efficiency, which significantly helps to achieve a device yield of 94%. Moreover, the 2D MoS2 controlled growth process ensures the uniformity of MoS2 layers across a (10 × 10) crossbar array that enhances the stability of fabricated MCA’s having minimal variability in device switching voltages (VSET: 4.16% and VRESET: 3.60%). The fabricated devices show excellent endurance (∼24,000 cycles) and retention (1.6 × 106 s). Furthermore, due to lower switching voltages and fast switching speed, the fabricated devices consume 53 pW power and 53 aJ energy, making them more energy-efficient and achieving an impressive 97.79% accuracy in MNIST digit recognition through synaptic behavior simulation. © 2025 American Chemical Society.