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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Adoni, Chinmayi | en_US |
| dc.contributor.author | Semwal, Sandeep | en_US |
| dc.date.accessioned | 2025-07-09T13:47:59Z | - |
| dc.date.available | 2025-07-09T13:47:59Z | - |
| dc.date.issued | 2025 | - |
| dc.identifier.citation | Adoni, C., Semwal, S., Gupta, M., Raskin, J.-P., & Krant, A. (2025). Electrical Tunability in 3-Gated Reconfigurable Transistor for Analog/RF Applications. IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/JEDS.2025.3581677 | en_US |
| dc.identifier.issn | 2168-6734 | - |
| dc.identifier.other | EID(2-s2.0-105008959909) | - |
| dc.identifier.uri | https://dx.doi.org/10.1109/JEDS.2025.3581677 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in:8080/jspui/handle/123456789/16377 | - |
| dc.description.abstract | The potential of electrical tunability in a 3-gated (3G) Reconfigurable Field Effect Transistor (RFET) for analog/RF applications is investigated through four distinct configurations (R2-IG-LVT, R1-IG-Ambi, R3-IG-LVT, and R2-IG-HVT). The electrical connections through two program gates (PG) and one control gate (CG) in 3G-RFET supports the implementation of configurations suitable for low-VTH (R2-IG-LVT and R3-IG-LVT) and high-VTH (R2-IGHVT), phase follower/reversal (R2-IG-LVT), frequency doubler (R1-IGAmbi), high gain (R3-IG-LVT), lower parasitic capacitance (R2-IG-LVT and R3-IG-LVT), and higher linearity (R3-IG-LVT) applications. Results showcase electrical tunability as an opportunity to realize many analog/RF features–in–one nanoscale 3G-RFET. © 2013 IEEE. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | en_US |
| dc.source | IEEE Journal of the Electron Devices Society | en_US |
| dc.subject | Analog/RF | en_US |
| dc.subject | Cutoff frequency | en_US |
| dc.subject | Frequency/Phase modulation | en_US |
| dc.subject | Gain | en_US |
| dc.subject | Linearity | en_US |
| dc.subject | Reconfigurable transistor | en_US |
| dc.title | Electrical Tunability in 3-Gated Reconfigurable Transistor for Analog/RF Applications | en_US |
| dc.type | Journal Article | en_US |
| Appears in Collections: | Department of Electrical Engineering | |
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