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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/16480
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dc.contributor.authorKumar, Rajeshen_US
dc.date.accessioned2025-07-14T13:22:58Z-
dc.date.available2025-07-14T13:22:58Z-
dc.date.issued2025-
dc.identifier.citationSahoo, P. K., Rajput, N., Pal, A., & Kumar, R. (2025). Editorial: Wide-bandgap oxide semiconductors: unveiling excitonic potential. Frontiers in Materials, 12. https://doi.org/10.3389/fmats.2025.1640463en_US
dc.identifier.issn2296-8016-
dc.identifier.otherEID(2-s2.0-105009912121)-
dc.identifier.urihttps://dx.doi.org/10.3389/fmats.2025.1640463-
dc.identifier.urihttps://dspace.iiti.ac.in:8080/jspui/handle/123456789/16480-
dc.description.abstract[No abstract available]en_US
dc.language.isoenen_US
dc.publisherFrontiers Media SAen_US
dc.sourceFrontiers in Materialsen_US
dc.subjectexcitonen_US
dc.subjectoptoelectronic devicesen_US
dc.subjectoxide semiconductorsen_US
dc.subjectquantum confinementen_US
dc.subjectwide bandgapen_US
dc.titleEditorial: Wide-bandgap oxide semiconductors: unveiling excitonic potentialen_US
dc.typeEditorialen_US
Appears in Collections:Department of Physics

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