Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/16494
Full metadata record
DC FieldValueLanguage
dc.contributor.advisorSingh, Vipul-
dc.contributor.authorTripathi, Akash-
dc.date.accessioned2025-07-15T14:35:56Z-
dc.date.available2025-07-15T14:35:56Z-
dc.date.issued2025-05-13-
dc.identifier.urihttps://dspace.iiti.ac.in:8080/jspui/handle/123456789/16494-
dc.description.abstractOne of the ways to sense this colourful world is by sensing different wavelengths of light emitted or reflected by different objects. Presently, photodetectors are crucial devices widely used to convert the emitted photons into electrical energy. In recent times, there has been immense emphasis given to fabricating photodetectors with wavelength tunability. The research on semiconductor-based photodetectors with UV-C (200 nm-280 nm), wideband [i.e., UV-C to near-infrared (NIR) (up to 1000 nm)], and multi-band or dual-band spectra has been given immense importance for a wide range of applications by the scientific community. A common approach for fabricating broadband photodetectors is to form heterojunctions between the high and low-bandgap semiconductors. Recently, high-performance photodetectors based on hetero-junctions of perovskites and 2D materials with other semiconductors, such as ZnO, NiO, etc., have been reported.en_US
dc.language.isoenen_US
dc.publisherDepartment of Electrical Engineering, IIT Indoreen_US
dc.relation.ispartofseriesTH716;-
dc.subjectElectrical Engineeringen_US
dc.titleInvestigations of solution-processed CUO nanostructures towards the development of wavelength tunable photodetectorsen_US
dc.typeThesis_Ph.Den_US
Appears in Collections:Department of Electrical Engineering_ETD

Files in This Item:
File Description SizeFormat 
TH_716_Akash_Tripathi_1701102006.pdf13.72 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetric Badge: