Magnetism in 2D materials for spintronics application

Abstract

This project focuses on the synthesis and magnetic characterization of two dimensional (2D) magnetic materials for potential spintronics applications. Fe3GeTe2 and VSe2 were synthesized and studied in detail to understand their magnetic behavior, with particular attention to the effects of stoichiometric deviations and structural defects. Additionally, other 2D materials—ZrSe2, ZrSe3, and TiSe2—synthesized by lab colleagues, were examined to explore their intrinsic and defect-induced magnetic properties. Various characterization techniques, including powder X-ray diffraction (PXRD), energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy, resistivity, and magnetic measurements, were employed. While the synthesis of Fe3GeTe2 was hindered by tellurium loss, VSe2, although successfully forming the desired phase, exhibited deviations from the ideal stoichiometry. Magnetic measurements across other 2D chalcogenides revealed behaviors ranging from diamagnetism to paramagnetism, depending on factors such as composition and doping. These findings underscore the sensitivity of magnetism in 2D materials to structural and compositional variations and highlight their potential for next-generation magnetic and spintronic devices.