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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yadav, Saurabh | en_US |
| dc.contributor.author | Paul, Animesh | en_US |
| dc.contributor.author | Mukherjee, Shaibal | en_US |
| dc.date.accessioned | 2025-11-12T16:56:47Z | - |
| dc.date.available | 2025-11-12T16:56:47Z | - |
| dc.date.issued | 2026 | - |
| dc.identifier.citation | Yadav, S., Kumar, S. N., Paul, A., Nirmal, K. A., Khot, A. C., Dongale, T. D., Kim, T., & Mukherjee, S. (2026). Enhanced switching window for DIBS-grown Al/Y2O3/GZO memristor. Materials Letters, 405. https://doi.org/10.1016/j.matlet.2025.139726 | en_US |
| dc.identifier.issn | 18734979 | - |
| dc.identifier.issn | 0167577X | - |
| dc.identifier.other | EID(2-s2.0-105020260962) | - |
| dc.identifier.uri | https://dx.doi.org/10.1016/j.matlet.2025.139726 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in:8080/jspui/handle/123456789/17179 | - |
| dc.description.abstract | In this letter, we report a dual ion beam sputtered Y<inf>2</inf>O<inf>3</inf> memristor, which exhibits stable bipolar resistive switching governed by the filamentary switching mechanism. The obtained experimental data reveal that the fabricated devices show large memory switching window (>105) with excellent endurance (>5 × 104 cycles) and retention (>106 s) properties by maintaining a high value of the ON/OFF ratio. Moreover, C-AFM analysis also confirms that the fabricated devices exhibit filamentary switching. The fabricated devices efficiently emulate the synaptic learning behavior with better linearity in weight update. © 2025 Elsevier B.V., All rights reserved. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier B.V. | en_US |
| dc.source | Materials Letters | en_US |
| dc.subject | C-AFM | en_US |
| dc.subject | Filamentary switching | en_US |
| dc.subject | Memristor | en_US |
| dc.subject | Yttrium oxide | en_US |
| dc.title | Enhanced switching window for DIBS-grown Al/Y2O3/GZO memristor | en_US |
| dc.type | Journal Article | en_US |
| Appears in Collections: | Department of Electrical Engineering | |
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