Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/17818
Title: Nanowire field effect transistors-applications in integrated circuits and sensing
Authors: Singh, Shailendra
Issue Date: 2026
Publisher: CRC Press
Citation: Mittal, P. A., Srivastava, M. K., Dixit, A., Saxena, A., & Kumar, V. (2026). Nanowire field effect transistors-applications in integrated circuits and sensing (pp. 235–264). https://doi.org/10.1201/9781003634645-9
Abstract: The search for better materials and designs has become increasingly pressing as electronics get smaller and more efficient. A highly promising alternative option for the use of integrated circuits and sensing is a type of nanowire Field-Effect Transistors (FETs). The chips based on these transistors are faster, consume less electric power, and are able to carry a faster charge. © 2026 editorial matter and selection, Shailendra Singh, Balwinder Raj, Arun Kumar Manoharan and Girdhar Gopal
all chapters, the contributors.
URI: https://dx.doi.org/10.1201/9781003634645-9
https://dspace.iiti.ac.in:8080/jspui/handle/123456789/17818
ISBN: 9781041062677
9781040578841
Type of Material: Book Chapter
Appears in Collections:Department of Physics

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