Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/17831
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dc.contributor.authorKranti, Abhinaven_US
dc.date.accessioned2026-02-10T15:50:12Z-
dc.date.available2026-02-10T15:50:12Z-
dc.date.issued2026-
dc.identifier.citationSemwal, S., Su, P., & Kranti, A. (2026). Electrically Configured Analog Signal Modulation and Logic Operation with Dual-Doped RFET. IEEE Transactions on Nanotechnology. https://doi.org/10.1109/TNANO.2026.3656188en_US
dc.identifier.issn1536125X-
dc.identifier.otherEID(2-s2.0-105028334413)-
dc.identifier.urihttps://dx.doi.org/10.1109/TNANO.2026.3656188-
dc.identifier.urihttps://dspace.iiti.ac.in:8080/jspui/handle/123456789/17831-
dc.description.abstractThis paper proposes and analyzes various configurations of dual-doped (DD) reconfigurable field-effect transistors (RFET) that enable operation as p-type, n-type, and ambipolar operational modes through electrical connections of electrodes. This versatility, achieved through a single DD-RFET, is harnessed by demonstrating applications for analog design (frequency-doubling, phase-reversal, and phase-following applications) and logic operations (NOT, OR, NAND, and XOR). DD-RFET enables the realization of analog and logic blocks through a single device paving the way for area-efficient multifunctional processors. © 2002-2012 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceIEEE Transactions on Nanotechnologyen_US
dc.titleElectrically Configured Analog Signal Modulation and Logic Operation with Dual-Doped RFETen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Electrical Engineering

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