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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/18033
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dc.contributor.authorKumar, Santoshen_US
dc.contributor.authorKumar, Ashutoshen_US
dc.contributor.authorMishra, Rahul Deven_US
dc.contributor.authorKumar, Mukeshen_US
dc.date.accessioned2026-03-17T11:03:47Z-
dc.date.available2026-03-17T11:03:47Z-
dc.date.issued2025-
dc.identifier.citationKumar, S., Kumar, A., Mishra, R. D., & Kumar, M. (2025). Nanophotonic Resistive Switching in Ag-ITO-SiO2on Si: A Pathway to High-Density Optical Storage. 2025 IEEE Photonics Conference, IPC 2025 - Proceedings. https://doi.org/10.1109/IPC65510.2025.11282274en_US
dc.identifier.isbn979-833152559-0-
dc.identifier.otherEID(2-s2.0-105031785940)-
dc.identifier.urihttps://dx.doi.org/10.1109/IPC65510.2025.11282274-
dc.identifier.urihttps://dspace.iiti.ac.in:8080/jspui/handle/123456789/18033-
dc.description.abstractWe present a CMOS-compatible multilevel nanophotonic resistive switching device based on Ag-ITO-SiO2 structure on silicon emphasizing high storage density. The device exhibits stable multiple optical states, high-extinction ratio of 32 dB and high retention making ideal for in-memory computing and diverse applications in photonic systems. © 2025 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.source2025 IEEE Photonics Conference, IPC 2025 - Proceedingsen_US
dc.titleNanophotonic Resistive Switching in Ag-ITO-SiO2on Si: A Pathway to High-Density Optical Storageen_US
dc.typeConference Paperen_US
Appears in Collections:Department of Electrical Engineering

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