Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/18243
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dc.contributor.authorMahapatra, Brahmaduttaen_US
dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2026-05-14T12:28:19Z-
dc.date.available2026-05-14T12:28:19Z-
dc.date.issued2026-
dc.identifier.citationChoudhary, N., Kalal, S., Mahapatra, B., Mukherjee, S., Tayal, A., Sathe, V. G., Rajagopalan, R., Deshpande, U., & Gupta, M. (2026). Effect of point defects on structure, hardness and plasmonic properties of ZrN thin films. Materialia, 46. https://doi.org/10.1016/j.mtla.2026.102735en_US
dc.identifier.issn2589-1529-
dc.identifier.otherEID(2-s2.0-105034475356)-
dc.identifier.urihttps://dx.doi.org/10.1016/j.mtla.2026.102735-
dc.identifier.urihttps://dspace.iiti.ac.in:8080/jspui/handle/123456789/18243-
dc.description.abstractZirconium nitride (ZrN) thin films combine high electrical conductivity, thermal stability, and chemical inertness with tunable optical and mechanical properties, making them ideal for cutting tools, wear-resistant coatings, and plasmonic devices. In this study, face-centered cubic ZrN films were grown at a substrate temperature of 723 K by reactive magnetron sputtering at nitrogen partial flow (RN2) = 0, 1.5, 2, 5, 10 and 12.5 %. X-ray diffraction confirmed that a single-phase ZrN starts to appear when the RN2 exceeds 2 % and well-crystalline phases appear for RN2 = 5 and 10 % samples. Raman spectroscopy measurements detected first-order modes indicative of intrinsic disorder in these samples. X-ray photoelectron spectroscopy was done to study the chemical state of samples. N and Zr K -edge x-ray absorption spectroscopy and Zr K -edge extended x-ray absorption fine structure evidenced local structural disorder and point defects in these ZrN samples which are enhanced with increasing RN2 from 5 to 12.5 %. Nanoindentation measurements showed a peak hardness of 29 GPa and elastic modulus of 245 GPa in RN2 = 2 % sample because of grain boundary hardening, with a secondary hardness maximum 26 GPa evidenced in RN2 = 10 % sample associated with the presence of point defects. Spectroscopic ellipsometry demonstrated a red-shift of the screened plasma energy from 3.57 to 2.27 eV as the RN2 increased, reflecting reduced free-electron density due to defect formation. These results establish that controlled nitrogen flow ratio enables a systematic tuning of point-defect concentration, thereby modulating the mechanical resilience and plasmonic response of ZrN thin films for advanced functional coatings. © 2026 Acta Materialia Inc.en_US
dc.language.isoenen_US
dc.publisherElsevier B.V.en_US
dc.sourceMaterialiaen_US
dc.titleEffect of point defects on structure, hardness and plasmonic properties of ZrN thin filmsen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Electrical Engineering

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