Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/18334
Title: High-Responsivity and Dual-Band ZnO UV Photodetectors via Additive-Engineered Nanowalls and Nanorods
Authors: Singh, Pritika
Singh, Vipul
Issue Date: 2026
Publisher: Institute of Electrical and Electronics Engineers Inc.
Citation: Singh, P., Dixit, T., & Singh, V. (2026). High-Responsivity and Dual-Band ZnO UV Photodetectors via Additive-Engineered Nanowalls and Nanorods. IEEE Photonics Technology Letters. https://doi.org/10.1109/LPT.2026.3683513
Abstract: A facile additive-assisted hydrothermal route is demonstrated to realize high-performance ZnO ultraviolet (UV) photodetectors. Incorporation of trisodium citrate and potassium dichromate into the growth solution enables selective formation of ZnO nanowalls and nanorods. X-ray photoelectron spectroscopy confirms Cr3+ incorporation and associated defect-state modulation in the ZnO lattice. The nanowall device exhibits high responsivity (~1.4 × 103 A/W), photosensitivity (~3.7 × 106), and detectivity (~1.3 × 101s Jones), attributed to efficient lateral charge transport and reduced carrier trapping, whereas nanorods display a distinct dual-band photoresponse near ~330 and ~370 nm due to additive-induced sub-bandgap states. This simple, low-temperature, and cost-effective approach provides a scalable route for tailoring ZnO nanostructures for high-sensitivity and dual UVA-band photodetection, enabling applications in environmental monitoring, flame detection, secure optical communication, and wearable health diagnostics. © 1989-2012 IEEE.
URI: https://dx.doi.org/10.1109/LPT.2026.3683513
https://dspace.iiti.ac.in:8080/jspui/handle/123456789/18334
ISSN: 1041-1135
Type of Material: Journal Article
Appears in Collections:Department of Electrical Engineering

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetric Badge: