Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/19030
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSingh, Pritikaen_US
dc.contributor.authorSingh, Vipulen_US
dc.date.accessioned2026-09-01T04:26:49Z-
dc.date.available2026-09-01T04:26:49Z-
dc.date.issued2026-
dc.identifier.citationSingh, P., Rai, H., Dixit, T., Pandey, S. S., & Singh, V. (2026). Synergistic Thin-Film Alignment and Surface Passivation for Anisotropic Charge Transport and Long-Term Stability in OFETs. IEEE Transactions on Device and Materials Reliability. https://doi.org/10.1109/TDMR.2026.3721283en_US
dc.identifier.issn1530-4388-
dc.identifier.otherEID(2-s2.0-105047464136)-
dc.identifier.urihttps://dx.doi.org/10.1109/TDMR.2026.3721283-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/19030-
dc.description.abstractOrganic field-effect transistors (OFETs) based on conjugated polymers are promising for flexible, low-cost electronicsen_US
dc.description.abstracthowever, their performance is often limited by interfacial trap states and disordered molecular packing. In this work, the combined influence of fabrication method (spin coating and UFTM), dielectric interface engineering (OTS and CYTOP), and molecular orientation on the charge transport characteristics of poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2)-based thin film transistors is systematically investigated. The UFTM process produces highly aligned polymer films, yielding pronounced optical anisotropy with a dichroic ratio of ~ 6.5 at an optimized annealing temperature of 120 °C. The optimized UFTM CYTOP (ǁ) device exhibits a maximum field-effect mobility of ~2.8 × 10-3 cm2 V-1 s-1, an on/off current ratio of ~ 4 × 106, improved threshold voltage, reduced subthreshold swing, excellent device-to-device reproducibility, while retaining ~ 80% of its initial mobility after 60 days under ambient conditions. These findings demonstrate a simple, low-cost, and scalable fabrication strategy for improving the electrical performance and operational reliability of F8T2-based OFETs. © 2001-2011 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceIEEE Transactions on Device and Materials Reliabilityen_US
dc.titleSynergistic Thin-Film Alignment and Surface Passivation for Anisotropic Charge Transport and Long-Term Stability in OFETsen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Electrical Engineering

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetric Badge: