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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5056
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dc.contributor.authorSemwal, Sandeepen_US
dc.contributor.authorKranti, Abhinaven_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:38:34Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:38:34Z-
dc.date.issued2021-
dc.identifier.citationSemwal, S., & Kranti, A. (2021). Ferroelectric thickness dependent characteristics of negative capacitance transistors. Paper presented at the IEEE International Symposium on Applications of Feeroelectric, ISAF 2021, International Symposium on Integrated Functionalities, ISIF 2021 and Piezoresponse Force Microscopy Workshop, PFM 2021 - Proceedings, doi:10.1109/ISAF51943.2021.9477365en_US
dc.identifier.isbn9781665404440-
dc.identifier.otherEID(2-s2.0-85114131412)-
dc.identifier.urihttps://doi.org/10.1109/ISAF51943.2021.9477365-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5056-
dc.description.abstractIn this work, we investigate the performance of a Hafnium Zirconium oxide (Hf0.5Zr0.5O2) based double gate (DG) metal-ferroelectric-metal-insulator-semiconductor (MFMIS) negative capacitance (NC) field effect transistor (FET) by considering ferroelectric thickness dependent remnant polarization and coercive field. The proposed approach facilitates an insightful and accurate estimation of device characteristics which will be useful for design optimization of MFMIS NCFET architectures. © 2021 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceIEEE International Symposium on Applications of Feeroelectric, ISAF 2021, International Symposium on Integrated Functionalities, ISIF 2021 and Piezoresponse Force Microscopy Workshop, PFM 2021 - Proceedingsen_US
dc.subjectCapacitanceen_US
dc.subjectFerroelectricityen_US
dc.subjectField effect transistorsen_US
dc.subjectHafnium oxidesen_US
dc.subjectMetal insulator boundariesen_US
dc.subjectMIS devicesen_US
dc.subjectScanning probe microscopyen_US
dc.subjectAccurate estimationen_US
dc.subjectDependent characteristicsen_US
dc.subjectDesign optimizationen_US
dc.subjectDevice characteristicsen_US
dc.subjectFerroelectric thicknessen_US
dc.subjectMetal ferroelectric metal insulator semiconductorsen_US
dc.subjectNegative capacitanceen_US
dc.subjectRemnant polarizationsen_US
dc.subjectZirconium compoundsen_US
dc.titleFerroelectric Thickness Dependent Characteristics of Negative Capacitance Transistorsen_US
dc.typeConference Paperen_US
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