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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5113
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dc.contributor.authorSiddharth, Gauraven_US
dc.contributor.authorSingh, Ruchi A.en_US
dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:38:42Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:38:42Z-
dc.date.issued2020-
dc.identifier.citationSiddharth, G., Singh, R., & Mukherjee, S. (2020). Modelling and performance analysis of InGaN/GaN based multiple quantum well solar cells. Paper presented at the Conference Record of the IEEE Photovoltaic Specialists Conference, , 2020-June 0098-0100. doi:10.1109/PVSC45281.2020.9300422en_US
dc.identifier.isbn9781728161150-
dc.identifier.issn0160-8371-
dc.identifier.otherEID(2-s2.0-85099563567)-
dc.identifier.urihttps://doi.org/10.1109/PVSC45281.2020.9300422-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5113-
dc.description.abstractIn this work, an analytical model is proposed as a convenient tool for the performance analysis of multiple quantum well (MQW) solar cells (MQWSC). Significantly, the American Society for Testing and Materials (ASTM) standards data sheets are utilized for obtaining photon flux instead of Plank's blackbody radiation law. Further, the performance parameters are evaluated using the obtained photon flux density. The MQWSC is analyzed based on the composition of indium in InGaN material of the intrinsic region (active region), the operating temperature and the number of MQWs used in MQWSC. © 2020 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceConference Record of the IEEE Photovoltaic Specialists Conferenceen_US
dc.subjectGallium alloysen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectIndium alloysen_US
dc.subjectPhotonsen_US
dc.subjectSemiconductor alloysen_US
dc.subjectSolar cellsen_US
dc.subjectAmerican society for testing and materialsen_US
dc.subjectBlackbody radiation lawsen_US
dc.subjectModelling and performance analysisen_US
dc.subjectOperating temperatureen_US
dc.subjectPerformance analysisen_US
dc.subjectPerformance parametersen_US
dc.subjectPhoton flux densitiesen_US
dc.subjectQuantum well solar cellsen_US
dc.subjectSemiconductor quantum wellsen_US
dc.titleModelling and Performance analysis of InGaN/GaN based Multiple Quantum Well solar cellsen_US
dc.typeConference Paperen_US
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