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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5177
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dc.contributor.authorMandal, Biswajiten_US
dc.contributor.authorKranti, Abhinaven_US
dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:38:52Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:38:52Z-
dc.date.issued2019-
dc.identifier.citationKumar, A., Das, M., Mandal, B., Bhardwaj, R., Aaryashree, Kranti, A., & Mukherjee, S. (2019). Nano-scaled ZnO based RRAM with memristive behavior fabricated by dual ion beam sputtering. Paper presented at the Proceedings of the IEEE Conference on Nanotechnology, , 2018-July doi:10.1109/NANO.2018.8626226en_US
dc.identifier.isbn9781538653364-
dc.identifier.issn1944-9399-
dc.identifier.otherEID(2-s2.0-85062262299)-
dc.identifier.urihttps://doi.org/10.1109/NANO.2018.8626226-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5177-
dc.description.abstractThis work reports forming-free (FF) resistive switching (RS) with high endurance and retention for ZnO based thin films fabricated by dual ion beam sputtering (DIBS). Undoped and Ga-doped ZnO thin films have been used to compare the effect of doping upon RS behavior. © 2018 IEEE.en_US
dc.language.isoenen_US
dc.publisherIEEE Computer Societyen_US
dc.sourceProceedings of the IEEE Conference on Nanotechnologyen_US
dc.subjectFabricationen_US
dc.subjectGallium compoundsen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectNanotechnologyen_US
dc.subjectRRAMen_US
dc.subjectSemiconductor dopingen_US
dc.subjectSputteringen_US
dc.subjectThin filmsen_US
dc.subjectZinc oxideen_US
dc.subjectDual ion beam sputteringen_US
dc.subjectEffect of doping uponen_US
dc.subjectGa-doped ZnOen_US
dc.subjectMemristive behavioren_US
dc.subjectResistive switchingen_US
dc.subjectIon beamsen_US
dc.titleNano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputteringen_US
dc.typeConference Paperen_US
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