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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5198
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dc.contributor.authorKhan, Md Arifen_US
dc.contributor.authorSingh, Ruchi A.en_US
dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:38:56Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:38:56Z-
dc.date.issued2019-
dc.identifier.citationBhardwaj, R., Sharma, P., Khan, M. A., Singh, R., & Mukherjee, S. (2019). Mgzno based uv heterojunction photodetector fabricated using dual ion beam sputtering. Paper presented at the Springer Proceedings in Physics, , 215 981-984. doi:10.1007/978-3-319-97604-4_149en_US
dc.identifier.isbn9783319976037-
dc.identifier.issn0930-8989-
dc.identifier.otherEID(2-s2.0-85064043785)-
dc.identifier.urihttps://doi.org/10.1007/978-3-319-97604-4_149-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5198-
dc.description.abstractThis abstract reports the realization of p-type conduction in Sb (5 at.%): Mg0.10Zn0.90O (SMZO) grown in different growth ambient and then fabrication of SMZO/n-Si based UV heterojunction photodetector grown by dual ion beam sputtering (DIBS) system. The fabricated photodetectors were then probed for the effect of growth ambient using current–voltage (I–V) and photoresponse measurement on photodetector properties. © Springer Nature Switzerland AG 2019.en_US
dc.language.isoenen_US
dc.publisherSpringer Science and Business Media, LLCen_US
dc.sourceSpringer Proceedings in Physicsen_US
dc.subjectFabricationen_US
dc.subjectHeterojunctionsen_US
dc.subjectMagnesium alloysen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotonsen_US
dc.subjectSemiconductor alloysen_US
dc.subjectSilicon alloysen_US
dc.subjectSputteringen_US
dc.subjectZinc alloysen_US
dc.subjectDual ion beam sputteringen_US
dc.subjectGrowth ambienten_US
dc.subjectHeterojunction photodetectorsen_US
dc.subjectP-Type conductionen_US
dc.subjectPhotoresponse measurementsen_US
dc.subjectIon beamsen_US
dc.titleMgzno based uv heterojunction photodetector fabricated using dual ion beam sputteringen_US
dc.typeConference Paperen_US
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