Effect of back gate voltage on double gate single layer graphene field-effect transistor with improved ion

Abstract

In this paper, the effect of back gate voltage on drain current in a double gate single layer graphene field effect transistor is shown through a developed mathematical model. Through this structure and employing high dielectric constant material (HfO2) as top gate dielectric, result has been improved in terms of ION/IOFF ratio. This device structure is showing further increase in ON current on application of high back gate voltage. This projected mathematical model is valid for both electron and hole conduction to show the effect of back gate voltage on drain current, whereas in this literature high ION/IOFF ratio and high ION have been obtained for hole conduction. © Springer Nature Switzerland AG 2019.