Independent gate operation of nand flash memory device with improved retention characteristics

Abstract

In this work we have analyzed Independent Gate (IG) operation of fully depleted double gate MOSFET to improve the retention characteristics and memory window of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) memory at relatively lower applied voltages. It is shown that biasing the back gate at negative potential during the reading operation significantly enhance the difference in the threshold voltages (Vth) of the programmed and erased state owing to strong electrostatic coupling between front and back gates. Results highlight that IG operation leads to 50% higher memory window in comparison with single gate mode. The retention characteristics at T = 358 K show that the memory window *1.2 V is obtained after 10 years. © Springer Nature Switzerland AG 2019.