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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5201
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dc.contributor.authorAnadkat, Nishekaen_US
dc.contributor.authorSiddharth, Gauraven_US
dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:38:56Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:38:56Z-
dc.date.issued2019-
dc.identifier.citationGarg, V., Sengar, B. S., Anadkat, N., Siddharth, G., Kumar, S., & Mukherjee, S. (2019). Evaluation of ga:Mgzno/cigse heterojunction for realization of all sputtered buffer-less solar cell. Paper presented at the Springer Proceedings in Physics, , 215 383-386. doi:10.1007/978-3-319-97604-4_58en_US
dc.identifier.isbn9783319976037-
dc.identifier.issn0930-8989-
dc.identifier.otherEID(2-s2.0-85064036650)-
dc.identifier.urihttps://doi.org/10.1007/978-3-319-97604-4_58-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5201-
dc.description.abstractIn this article, the valence band offset (VBOff) and conduction band offset (CBOff) values of Cu(In0.70Ga0.30)Se/3at.% Ga:Mg0.20Zn0.80O (GMZO) heterojunction, grown by dual ion beam sputtering system (DIBS), are calculated to understand the carrier transport mechanism at the heterojunction for realization of all sputtered buffer-less solar cells. © Springer Nature Switzerland AG 2019.en_US
dc.language.isoenen_US
dc.publisherSpringer Science and Business Media, LLCen_US
dc.sourceSpringer Proceedings in Physicsen_US
dc.subjectHeterojunctionsen_US
dc.subjectIon beamsen_US
dc.subjectSputteringen_US
dc.subjectCarrier transport mechanismsen_US
dc.subjectConduction band offseten_US
dc.subjectDual ion beam sputtering systemsen_US
dc.subjectValence band offsetsen_US
dc.subjectSolar cellsen_US
dc.titleEvaluation of ga:Mgzno/cigse heterojunction for realization of all sputtered buffer-less solar cellen_US
dc.typeConference Paperen_US
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