Tunneling Field Effect Transistors for Enhancing Energy Efficiency and Hardware Security of IoT Platforms: Challenges and Opportunities

Abstract

Tunneling Field-Effect Transistor (TFET) is a leading future transistor option for next generation VLSI applications and Internet of things (IoT). Many have demonstrated the energy efficiency of TFET circuits. In this work, we demonstrate for the first time utilizing TFET ambipolar device characteristics for jitter generation in post-processing circuits of true random number generators (TRNGs) and suitability for enhancing hardware security of IoT platforms. Device and circuit design challenges for TFET based transceiver designs for capacitive coupled interconnect in 3DIC and on-chip low dropout digital voltage regulators (DLDOs) are further explored towards energy efficient IoT platforms. © 2018 IEEE.