Emerging FETs for Low Power and High Speed Embedded Dynamic Random Access Memory

Abstract

The work reports on the assessment of two emerging devices, namely Tunnel Field Effect Transistor (TFET) and Junctionless Transistor (JLT), for applicability as low power and high speed embedded Dynamic Random Access Memory (eDRAM) at 85 °C. The critical aspect of DRAM functionality being independent gate operation has been realized through twin/dual architecture in TFET and JLT. The first (front) gate primarily controls the read operation based on band-To-band tunneling (TFET) and drift-diffusion mechanism (JLT), whereas the second gate is responsible for charge storage in both the devices. The ability of TFET and JLT with write operation in short time ( © 2018 IEEE.