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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kranti, Abhinav | en_US |
| dc.date.accessioned | 2022-03-17T01:00:00Z | - |
| dc.date.accessioned | 2022-03-17T15:39:11Z | - |
| dc.date.available | 2022-03-17T01:00:00Z | - |
| dc.date.available | 2022-03-17T15:39:11Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | Gupta, M., & Kranti, A. (2017). Steep current transition in germanium junctionless transistor. Paper presented at the EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits, , 2017-January 1-2. doi:10.1109/EDSSC.2017.8126463 | en_US |
| dc.identifier.isbn | 9781538629079 | - |
| dc.identifier.other | EID(2-s2.0-85043493852) | - |
| dc.identifier.uri | https://doi.org/10.1109/EDSSC.2017.8126463 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/5271 | - |
| dc.description.abstract | We report on the gate misalignment induced asymmetry to enhance the impact ionization in Germanium (Ge) Junctionless (JL) devices by localizing the carrier depletion to a narrow region of the semiconductor film. Results show that misaligned Ge JL MOSFET can exhibit higher values of impact ionization power per unit volume which leads to a sharp current transition with nearly an ideal Subthreshold swing (S-swing) -1 mV/decade at a drain bias of 0.9 V at room temperature. © 2017 IEEE. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | en_US |
| dc.source | EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits | en_US |
| dc.subject | Drain current | en_US |
| dc.subject | Electron devices | en_US |
| dc.subject | Germanium | en_US |
| dc.subject | Ionization | en_US |
| dc.subject | MOSFET devices | en_US |
| dc.subject | Semiconductor devices | en_US |
| dc.subject | Semiconductor junctions | en_US |
| dc.subject | Solid state devices | en_US |
| dc.subject | Current transitions | en_US |
| dc.subject | Gate misalignment | en_US |
| dc.subject | Junctionless | en_US |
| dc.subject | Junctionless transistors | en_US |
| dc.subject | MOS-FET | en_US |
| dc.subject | Semiconductor films | en_US |
| dc.subject | Steep S-swing | en_US |
| dc.subject | Subthreshold swing | en_US |
| dc.subject | Impact ionization | en_US |
| dc.title | Steep current transition in germanium junctionless transistor | en_US |
| dc.type | Conference Paper | en_US |
| Appears in Collections: | Department of Electrical Engineering | |
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