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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5273
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dc.contributor.authorShah, Ambika Prasaden_US
dc.contributor.authorVishvakarma, Santosh Kumaren_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:39:12Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:39:12Z-
dc.date.issued2017-
dc.identifier.citationYadav, N., Shah, A. P., Beohar, A., & Vishvakarma, S. K. (2017). Source drain gaussian doping profile analysis for high on current of ingaas based HEMT. Paper presented at the EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits, , 2017-January 1-2. doi:10.1109/EDSSC.2017.8126483en_US
dc.identifier.isbn9781538629079-
dc.identifier.otherEID(2-s2.0-85043453468)-
dc.identifier.urihttps://doi.org/10.1109/EDSSC.2017.8126483-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5273-
dc.description.abstractIn this paper, we study the source drain Gaussian doping profile of strained In0.53Ga0.47AS based high electron mobility FinFET transistor (HEMT). The Gaussian doping profile is created using Pearson distribution model by setting the values of the gamma and beta parameters (the function characterizing the amorphous part of the profile). The ON current increases exponentially and the step doping also reduces the ON resistance, hence mobility increases. The proposed doping profile gives 2000 mA current for 30 nm gate length HFET. © 2017 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuitsen_US
dc.subjectDoping (additives)en_US
dc.subjectDrain currenten_US
dc.subjectElectron devicesen_US
dc.subjectGallium alloysen_US
dc.subjectGallium compoundsen_US
dc.subjectGaussian distributionen_US
dc.subjectIndium alloysen_US
dc.subjectSemiconducting indiumen_US
dc.subjectSemiconducting indium gallium arsenideen_US
dc.subjectSemiconductor junctionsen_US
dc.subjectSolid state devicesen_US
dc.subjectBeta parameteren_US
dc.subjectDoping profilesen_US
dc.subjectGaussian Doping Profilesen_US
dc.subjectHigh electron mobilityen_US
dc.subjectHigh performanceen_US
dc.subjectIn0.53Ga0.47Asen_US
dc.subjectInGaAsen_US
dc.subjectPearson distributionen_US
dc.subjectHigh electron mobility transistorsen_US
dc.titleSource drain Gaussian doping profile analysis for high on current of ingaas based HEMTen_US
dc.typeConference Paperen_US
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