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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5285
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dc.contributor.authorKranti, Abhinaven_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:39:14Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:39:14Z-
dc.date.issued2017-
dc.identifier.citationGupta, M., & Kranti, A. (2017). Influence of sidewall spacer thickness on steep switching in ge junctionless MOSFETs. Paper presented at the 2016 3rd International Conference on Emerging Electronics, ICEE 2016, doi:10.1109/ICEmElec.2016.8074582en_US
dc.identifier.isbn9781509036592-
dc.identifier.otherEID(2-s2.0-85039909043)-
dc.identifier.urihttps://doi.org/10.1109/ICEmElec.2016.8074582-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5285-
dc.description.abstractIn this work, we investigate the impact of sidewall spacer thickness on the subthreshold swing (5-swing) in symmetrical double gate (DG) Silicon (Si) and Germanium (Ge) junctionless (JL) transistor. It has shown that impact ionization (II) can be enhanced by an optimized narrow spacer whereas the use of non-optimized wider spacer lowers the degree of II by the influence of fringing field. The work demonstrates new opportunities to trigger II at lower drain bias by using Ge as channel material in JL devices with an optimized sidewall spacer. © 2016 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.source2016 3rd International Conference on Emerging Electronics, ICEE 2016en_US
dc.subjectGermaniumen_US
dc.subjectIonizationen_US
dc.subjectMOSFET devicesen_US
dc.subjectChannel materialsen_US
dc.subjectDouble gate MOSFETen_US
dc.subjectFringing fieldsen_US
dc.subjectGermaniums (Ge)en_US
dc.subjectJunctionlessen_US
dc.subjectJunctionless transistoren_US
dc.subjectSidewall spaceren_US
dc.subjectSubthreshold swingen_US
dc.subjectImpact ionizationen_US
dc.titleInfluence of sidewall spacer thickness on steep switching in Ge junctionless MOSFETsen_US
dc.typeConference Paperen_US
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